Variation of electrical and dielectric characteristics of Schottky diodes (SDs) depending on the existence of PVC and carbon-nanotube (CNT)-doped PVC interlayers

ERBİLEN TANRIKULU E.

Journal of Materials Science: Materials in Electronics, cilt.34, sa.1, 2023 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 34 Sayı: 1
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1007/s10854-022-09479-w
  • Dergi Adı: Journal of Materials Science: Materials in Electronics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, MEDLINE, Metadex, Civil Engineering Abstracts
  • Gazi Üniversitesi Adresli: Evet

Özet

© 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.Here, the effects of PVC and carbon-nanotube (CNT)-doped PVC interlayers on the electrical and dielectric properties of Au/(n-Si) Schottky diode (SD) were investigated through the current/voltage (I−V) and impedance–frequency (Z–f) data. Ideality factor (n), barrier height (ΦB), rectification ratio (RR), series (RS), and shunt (RSh) resistance were evaluated from the I−V plots using a variety of methods. The interlayer effects on the surface states (NSS) of the structure were investigated via voltage-dependent n and ΦB values. Lastly, current conduction mechanisms of the structures for both reverse and forward voltages were determined. Dielectric characteristics for instance complex-dielectric constant (ε*), complex-electric modulus (M*), and ac electrical conductivity (σac), and RS values were designated from the Z–f measurements. Experimental results reveal that the favorable effects of the presence of PVC and PVC:CNT interlayers on the properties of the MS structure and so can be good candidates for electronic applications instead of the traditional MS structure.