Voltage Dependent Profiles of the Surface States and Series Resistance (Rs) in the Al-(Cd:ZnO)-pSi Schottky Diodes (SDs) Utilizing Voltage-Current (IV) Characteristics

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Delen N., Tascioglu I., ALTINDAL YERİŞKİN S., ÖZBAY A.

Gazi University Journal of Science, cilt.37, sa.1, ss.457-463, 2024 (ESCI) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 37 Sayı: 1
  • Basım Tarihi: 2024
  • Doi Numarası: 10.35378/gujs.1218206
  • Dergi Adı: Gazi University Journal of Science
  • Derginin Tarandığı İndeksler: Emerging Sources Citation Index (ESCI), Scopus, Academic Search Premier, Aerospace Database, Aquatic Science & Fisheries Abstracts (ASFA), Communication Abstracts, Metadex, Civil Engineering Abstracts, TR DİZİN (ULAKBİM)
  • Sayfa Sayıları: ss.457-463
  • Anahtar Kelimeler: Comparative basic electrical parameters, I-V features and basic electrical parameters, The sources of interface traps
  • Gazi Üniversitesi Adresli: Evet

Özet

In this work, the main electronic parameters of the performed Al-(CdxZn1-xO)-pSi Metal/Interface-layer/Semiconductor (MIS) type Schottky Diodes (SDs) were investigated by utilizing IV characteristics at 300 K. The (CdxZn1-xO) interfacial layer was grown on the pSi wafer by utilizing the sol-gel technique. Ideality-factor(n), potential barrier ФBo, Rs, shunt resistance (Rsh), and rectification rate (RR) (Iforward/Ireverse) values were calculated based on thermionic emission (TE) theory and Cheung function between-4.5V and 4.5V. There parameters also varied for the samples with different doping ratios. Energy-dependent surface state profiles of them were also extracted from the forward bias IV data, and their magnitude was found on the order of 1012eV-1.cm-2 which is very appropriate for the MIS type SD. The values of n, barrier height (BH), ФBo, and RR changed from 4.347, 0.582 eV, 5.74x103 to 5.293, 0.607 eV, 2.83x106. These results show that electronic parameters of these SDs are a strong function of voltage, calculation method, and the doping rate of the Cadminium (Cd) interfacial layer. The best ratio for Cd: ZnO was determined to be 30%; therefore, this interfacial layer may be used instead of traditional insulator layers to enhance the quality of Metal/Semiconductor (MS) type SDs.